铂膜电阻温度传感器耐高温结构设计与性能验证

Design and performance verification of high temperature resistant structure of Pt film resistive temperature sensor

针对铂(Pt)膜电阻温度传感器难以实现850℃高温环境长期稳定测量问题。采用磁控溅射法在996氧化铝(Al_(2)O_(3))陶瓷衬底沉积Pt膜温度敏感层,通过对Pt膜进行热处理、耐高温表面防护结构提升其耐高温性能,采用阻值修调技术控制传感器阻值精度,结合微机电系统(MEMS)与厚膜工艺技术制备Pt膜电阻温度传感器。结果表明:Pt膜电阻温度传感器电阻温度系数(TCR)为(3851±3)×10^(-6)℃;0℃电阻值控制在199.92~200.06Ω范围内;传感器从室温阶跃至850℃热响应时间(τ_(90))为15.1 s;传感器经100次室温至850℃温度冲击后输出稳定;经850℃环境1000 h寿命考核,传感器0℃阻值漂移量小于0.5%。制备的Pt膜电阻温度传感器可长期保持850℃高温环境稳定测量,该温度传感器广泛应用于汽车尾气排放、发动机健康监测等高温测量领域。

Aiming at the problem that platinum(Pt)film resistive temperature sensor is difficult to achieve long-term stable measurement in 850℃ high temperature environment.Magnetron sputtering method is used to prepare Pt film temperature sensitive layer on 996 alumina(Al2 O3)ceramic substrate.By adopting heat processing on Pt film,high temperature resistant surface protection structure to enhance performance of high temperature resistance,and resistance adjustment technology to control resistance precision of the sensor.The Pt film resistive temperature sensors are prepared by MEMS and thick-film technology.The results show that the temperature coefficient of resistance(TCR)for Pt film resistive temperature sensor is(3851±3)×10^(-6)℃.The resistance value is controlled within 199.92~200.06Ω at 0℃.Thermal response time(τ_(90))of the sensor from room temperature to 850℃ is 15.1 s.The output of the sensor is stable after 100 cycles thermal shock from room temperature to 850℃.The resistance drift of the sensor at 0℃ is less than 0.5% after 850℃ for 1000 h life assessment.The prepared Pt film resistive temperature sensor can maintain long time and stable measurement at high temperature.The temperature sensor can be widely used in high temperature measurement fields such as automotive exhaust emission and engine health monitoring.