Defect-induced electron rich nanodomains in CoSe_(0.5)S_(1.5)/GA realize fast ion migration kinetics as sodium-ion capacitor anode

Optimizing charge migration and alleviating volume expansion in anode materials are the key to improve the electrochemical performance for sodium-ion storage devices.Herein,a hierarchical porous conducting matrix confining defect-rich selenium doped cobalt dichalcogenide(CoSe_(0.5)S_(1.5)/GA)is constructed as a promising SICs anode based on the guidance of theoretical calculation analysis.The increased defect concentration significantly enhanced the disorder degree of the compound and presented electron aggregation around the S atoms,which effectively modulated the electronic structure,further enabling high rate and ultra-capacity sodium storage.Moreover,strong interfacial coupling could construct spatial constraint to alleviate volume expansion as well as maintain electrode integrity and stability.The CoSe_(0.5)S_(1.5)/GA electrode can deliver a high capacity of 310.1 mA h g^(-1)after 2000 cycles at 1 A g^(-1),and the CoSe_(0.5)S_(1.5)/GA//AC sodium ion capacitor can exhibit an outstanding energy density of 237.5 W h kg^(-1).A series of characterization and theoretical calculation convincingly reveal that the defect moieties can regulate the Na^(+)storage and diffusion kinetics,which prove that our defect manufacture coupling with space-confined strategy can provide deep insights into the development of high-performance Na^(+)storage devices.