摘要
随着CMOS工艺的快速发展,集成电路多电源域设计越来越普遍,电路全芯片ESD设计也越来越复杂。介绍了一款基于0.35μm CMOS工艺的32路抗辐射总线接口电路的ESD设计技术。同时,对双向耐高压输入管脚的ESD进行加固设计,提高了芯片的抗ESD能力。抗辐射32路总线接口电路通过了4.0 kV人体模型ESD测试,测试结果验证了该设计的有效性。
With the rapid development of CMOS process,integrated circuits with multiple power domain are becoming more and more common,and the circuit full-chip ESD design is becoming more and more complex.An ESD design technology for a 32-channel radiation-resistant bus interface circuit based on a 0.35μm CMOS process is presented.Meanwhile,the ESD reinforcement design of the bidirectional high voltage resistant input pins improves the ESD resistance of the chip.The radiation-resistant 32-bus interface circuit passes the 4.0 kV ESD test of human body model,and the results verify the effectiveness of the design.
作者
邹文英
李晓蓉
杨沛
周昕杰
高国平
ZOU Wenying;LI Xiaorong;YANG Pei;ZHOU Xinjie;GAO Guoping(China Key System&Integrated Circuit Co.,Ltd.,Wuxi 214072,China)
出处
《电子与封装》
2024年第1期35-39,共5页
Electronics & Packaging
关键词
双向耐高压
人体模型
多电源域
全芯片ESD
bidirectional high voltage resistant
human body model
multiple power domain
full-chip ESD