Si/SiC超结LDMOSFET的短路和温度特性

Short-Circuit and Temperature Characteristics of Si/SiC SJ-LDMOSFET

Si/SiC超结横向双扩散金属氧化物半导体场效应管(SJ-LDMOSFET)能有效改善Si SJ-LDMOSFET阻断电压低、温度特性差和短路可靠性低的问题。采用TCAD软件对Si SJ-LDMOSFET和Si/SiC SJ-LDMOSFET的短路和温度特性进行研究。当环境温度从300 K上升到400 K时,Si/SiC SJ-LDMOSFET内部最高温度均低于Si SJ-LDMOSFET,表现出良好的抑制自热效应的能力;Si/SiC SJ-LDMOSFET的击穿电压基本保持不变,且饱和电流退化率较低。发生短路时,Si/SiC SJ-LDMOSFET内部最高温度上升率要明显小于Si SJ-LDMOSFET。在环境温度为300 K和400 K时,Si/SiC SJ-LDMOSFET的短路维持时间相对于Si SJ-LDMOSFET分别增加了230%和266.7%。研究结果显示Si/SiC SJ-LDMOSFET在高温下具有更好的温度稳定性和抗短路能力,适用于高温、高压和高短路可靠性要求的环境中。

The low blocking voltage,poor temperature characteristics and low short-circuit reliability of Si super junction lateral double-diffused metal oxide semiconductor field effect transistor(SJ-LDMOSFET)can be effectively improved by the Si/SiC SJ-LDMOSFET.The short-circuit and tem-perature characteristics of Si SJ-LDMOSFET and Si/SiC SJ-LDMOSFET were studied by TCAD software.When the ambient temperature raises from 300 K to 400 K,the maximum temperature in Si/SiC SJ-LDMOSFET is lower than that of Si SJ-LDMOSFET,exhibiting good ability to suppress self-heating effect,the breakdown voltage of the Si/SiC SJ-LDMOSFET remains almost unchanged,and the saturation current degradation rate is lower.In the case of short-circuit,the internal maximum tempera-ture rise rate of the Si/SiC SJ-LDMOSFET is significantly slower than that of Si SJ-LDMOSFET.Com-pared with the Si SJ-LDMOSFET,the short-circuit maintenance time of Si/SiC SJ-LDMOSFET is increased by 230%and 266.7%at the ambient temperature of 300 K and 400 K,respectively.The research results reveal that the Si/SiC SJ-LDMOSFET has better temperature stability and short-circuit resistance capability at high temperatures,and it is suitable for environment with high temperature,high voltage,and high short-circuit reliability requirements.