VHF频段小型化千瓦级GaN功率放大器

VHF⁃Band Miniaturized Kilowatt Level GaN Power Amplifier

为了满足VHF频段对高功率放大器小型化的需求,设计并制备了一款基于05μm GaN高电子迁移率晶体管(HEMT)工艺的VHF频段小型化千瓦级功率放大器。通过采用多节微带电容网络和高介电常数的印制电路板(PCB)实现了末级功率放大器匹配电路的小型化;以高通滤波器作为级间匹配电路,在减小电路尺寸的同时,提高了链路增益;采用混合集成工艺,实现了电源调制器、前级驱动功率放大器和末级功率放大器等各单元的小型化高密度集成。测试结果表明,在024~030 GHz频带内,该功率放大器的工作电压为50 V,工作脉宽为100μs,在占空比10%、输入功率10 dBm的工作条件下,带内输出功率大于1000 W,功率附加效率约为60%~69%,功率增益大于50 dB,功放体积为46 mm×30 mm×6 mm。

In order to meet the miniaturization requirements for VHF-band high power amplifier,a VHF-band miniaturized kilowatt level power amplifier was designed and frabricated based on 05μm GaN high electron mobility transistor(HEMT)process.The miniaturization of the matching circuit for final power amplifier was realized by using a multi-stage microstrip capacitor network and a printed circuit board(PCB)with high dielectric constant.A high pass filter was used as the interstage matching cir-cuit,which reduced the circuit size and improved the link gain.With the hybrid integration process,the miniaturization and high-density integration of each unit such as the power modulator,front-stage driving power amplifier and final-stage power amplifier were realized.The test results show that in the frequency band of 024-030 GHz,the operating voltage of the power amplifier is 50 V and the pulse width is 100μs.Under operating conditions of 10%duty cycle and 10 dBm input power,the in band output power is greater than 1000 W,the power additional efficiency is about 60%-69%,the power gain is greater than 50 dB,and the volume of the power amplifier is 46 mm×30 mm×6 mm.