基于各向异性导电膜的射频SP8T开关无损测试

Non⁃Destructive Testing of RF SP8T Switches Based on Anisotropic Conductive Films

为了解决射频器件无损测试的难点,基于各向异性导电膜Z轴(ACF-Z)连接结构,设计并实现了射频器件无损测试技术。针对表面贴装式GaAs金属半导体场效应晶体管(MESFET)单刀八掷(SP8T)开关,该测试技术使用ACF-Z轴连接结构实现器件与测试板的无损连接,通过矢量网络分析仪对GaAs MESFET SP8T开关性能进行测试,最多可同时测试SP8T开关的8个通道。测试结果显示,1~8 GHz内,器件的插入损耗为-15~-35 dB,回波损耗为-15~-35 dB,测试过程中未对器件造成损伤。

In order to solve the difficulty of non-destructive testing of RF device,a non-destructive testing technique for RF devices was designed and realized based on the anisotropic conductive film Z axis(ACF-Z)connection structure.For GaAs metal semiconductor field effect transistor(MESFET)single-pole eight-throw(SP8T)switch with surface-mounted package,the ACF-Z connection structure was adopted to achieve the non-destructive connection between the device and the testing board.The switch performance of the device was tested by a vector network analyzer,and up to 8 channels of SP8T switch can be tested simultaneously.The results show that from 1 to 8 GHz,the insertion loss of the device is-15--35 dB,and the return loss is-15--35 dB.No damage was caused to the device during the testing process.