氮掺杂工艺以及退火处理对直拉法单晶硅的影响

The Effect of Nitrogen Doping Process and Annealing Treatment on Czochralski Monocrystalline Silicon

随着集成电路的飞速发展,要求超大规模集成电路用硅片具有更少的晶格缺陷及更低的有害杂质含量。因此,在晶体生长和器件制造过程中,必须对缺陷进行很好地控制,缺陷在硅材料的质量控制中起着关键作用。近年来通过氮掺杂控制缺陷动力学并改变缺陷的演变已被广泛应用于直拉法单晶硅中。本文以氮掺杂技术为基础,介绍了氮掺杂剂的基本性质及其与CZ硅中点缺陷的相互作用,氮掺杂对氧沉淀物、空洞的影响,以及退火处理对晶体原生颗粒、体微缺陷等的影响。

With the rapid development of integrated circuits,silicon wafers for ultra-large scale integrate circuit are required to possess fewer lattice defects and lower harmful impurities.Therefore,in the process of crystal growth and device manufacturing,it is necessary to effectively control defects,which play a crucial role in the quality control of silicon materials.In recent years,controlling defect dynamics and changing defect evolution through nitrogen doping has been widely used in Czochralski monocrystalline silicon.This article is based on nitrogen doping technology and introduces the basic properties of nitrogen dopant and its interactions with point defects in CZ silicon.The effects of nitrogen doping on oxygen precipitates and voids,as well as the effects of annealing treatment on crystal originated particles,bulk micro defects,etc.