GaSb单晶研究进展

Research Progress of GaSb Single Crystal

近年来,锑化物红外技术发展迅速,成为半导体技术的重要发展方向之一。锑化镓(GaSb)作为典型的Ⅲ-Ⅴ族化合物半导体,凭借优异的性能成为锑化物红外光电器件的关键衬底材料。随着锑化物红外技术逐步成熟和应用逐渐开展,人们对GaSb单晶片的需求日益剧增的同时也对其质量提出更高的要求。GaSb单晶片质量直接影响着外延材料和器件性能,这就要求GaSb单晶片具有大尺寸、更低的缺陷密度、更好的表面质量和一致性。本文就GaSb晶体材料的性质、制备方法、国内外机构的研究进展及其应用情况进行了综述,并对其发展前景和趋势进行了展望。

In recent years,antimonide infrared technology has developed rapidly and has become one of the important development directions of semiconductor technology.Gallium antimonide(GaSb),as a typicalⅢ-Ⅴcompound semiconductor,has become a key substrate material for antimonide infrared optoelectronics due to its excellent properties.The demand for GaSb wafers is increasing,and higher requirements are also put forward with the maturing and application of antimonide infrared technology.The properties of epitaxial materials and devices are directly affected by substrate quality,so that GaSb substrates are required to have the characteristics of large size,lower defect density,better surface quality and consistency.The properties,growth methods,research progress at home and abroad,as well as applications of GaSb crystal are reviewed in this paper,and the development prospects are also analyzed.