摘要
采用磁控溅射技术制备了金属-半导体-金属(Metal-Semiconductor-Metal,MSM)结构的锡(Sn)掺杂的氧化镓(Ga_(2)O_(3))薄膜紫外探测器,借助扫描电子显微镜、X射线衍射分析仪、X射线光电子能谱仪和紫外-可见分光光度计等测试设备表征了Ga_(2)O_(3)薄膜的表面形貌、晶体结构、元素组成、透过率以及紫外探测性能。实验结果表明,制备的Ga_(2)O_(3)薄膜表面光滑平整,由微小的纳米颗粒组成,Sn元素主要以Sn^(4+)离子形式,形成替位式杂质;掺杂Sn后的Ga_(2)O_(3)薄膜表面粗糙度增大,晶体质量下降,能有效地增强薄膜在紫外线光区的吸收能力;相比未掺杂Sn的Ga_(2)O_(3)紫外探测器,Sn掺杂能够有效地提升器件的光响应度和光暗电流比,且重复性和稳定性好。
The Sn doped Ga_(2)O_(3) thin film ultraviolet detectors with the metal-semiconductor-metal(MSM)structure are prepared by magnetic sputtering.The surface morphology,crystal structure,elemental composition,transmittance and ultraviolet detection performance of Ga_(2)O_(3) films are characterized by scanning electron microscope,X-ray diffraction analyzer,X-ray photoelectron spectrometer and ultraviolet-visible(UV-Vis)spectrophotometer.The results show that the surface of Ga_(2)O_(3) film is smooth and flat,composed of tiny nanoparticles,and tin mainly forms substituted impurities with Sn^(4+)ions.After doping with Sn,the surface roughness of Ga_(2)O_(3) film increases and the crystal quality decreases,which can effectively enhance the absorption capacity of the film in the ultraviolet light region.Compared with the undoped Ga_(2)O_(3) ultraviolet detector,Sn doping can effectively improve the photoresponsivity and light-to-dark current ratio of the device,and has good repeatability and stability.
作者
商世广
李佳臻
郭帅
贾艳敏
SHANG Shiguang;LI Jiazhen;GUO Shuai;JIA Yanmin(School of Electronic Engineering,Xi’an University of Posts and Telecommunications,Xi’an 710121,China;School of Physics and Information Technology,Shaanxi Normal University,Xi’an 710119,China)
出处
《西安邮电大学学报》
2023年第6期51-57,共7页
Journal of Xi’an University of Posts and Telecommunications
基金
陕西省重点研发计划项目(2022GY-002)。
关键词
氧化镓
紫外探测器
锡掺杂
磁控溅射
gallium oxide
ultraviolet detector
tin-doped
magnetron sputtering
