基于浮栅型薄膜晶体管的光控多值存储器

Optically-controlled multi-value memory based on floating-gate thin-film transistors

为了解决一般存储器存储密度低、数据保持能力弱及保密性差等问题,基于浮栅型薄膜晶体管制备了一种性能受光调制的信息存储器,该存储器的存储窗口大于60 V,在特定条件下可呈现“1”“中间态”“0”3种电流水平,采用PN共混的有源层提高了器件的开关比。该存储器在提高数据储存密度、光学信息加密存储方面具有较强的发展潜力,可为新一代智能电子设备的信息存储提供助力。

In order to solve the problems of low storage density,weak data retention ability and poor confidentiality of general memory,an information memory with optical modulation performance was prepared based on floating-gate thin-film transistors.The memory window is larger than 60 V,and the memory can exhibit three current levels:“1”,“intermediate state”and“0”under certain conditions.Moreover,the on-off ratio of the device is improved by using the PN blend active layer.The memory has strong development potential in improving data storage density and optical information encryption storage,and provides assistance for information storage of a new generation of intelligent electronic devices.