芯片三维集成激光隐形切割技术

Stealth Dicing Technology for 3D Integrated Chips

随着新一代信息装备内部SiP集成密度不断提升,传统的平面混合集成技术已接近极限,芯片三维集成技术必将成为未来SiP内部集成的主流形态,激光隐形切割技术是芯片三维集成技术的关键技术之一。介绍了激光隐形切割技术在芯片三维集成中的用途。通过传统分片技术与隐形切割技术的比较,阐述了各种晶圆分片工艺的技术特点,对隐形切割的基本原理、改质层的形成机理、切割方法、激光器参数选择做了详细分析。重点介绍了隐形切割技术在GaAs芯片三维集成分片工艺中的典型应用,对有关问题给出了解决方案。

With the increasing demand for SiP integration density in the new-generation information equipment,the traditional planar microwave integration technology is approaching its limit,and thus 3D integration technology for chips will inevitably become the mainstream of SiP integration in the future.Laser stealth dicing technology is one of the key technologies of 3D integration technology for chips.The application of laser stealth dicing technology in 3D integration for chips is introduced.The technical characteristics of various wafer dicing technologies are introduced and discussed through a contraststudy method by comparing the traditional slicing technologies with the stealth dicing technology.The basic principle of the stealth dicing,the formation mechanism of the modifi ed layers,the cutting methods as well as the laser parameter selection are analysed detailedly.Also,the typical applications of the stealth cutting technology for GaAs wafer in the 3D integrated scribing process are mainly introduced,and the solutions to relevant problems are given.