一种低反向恢复电流的无电压回跳RC-IGBT设计

A Low Reverse Recovery Current with Snapback-Free RC-IGBT Design

提出了一种无电压回跳的逆导型绝缘栅双极型晶体管(RC-IGBT)结构,在集电极侧场截止层下方加入了一个N型层作为高阻层且把N+集电区部分替换为P型薄层,通过加入的N型高阻层增加集电极电阻,同时用P型薄层保证在初始导通时集电区的空穴能够在第一时间注入,消除了电压回跳现象,并且使器件的反向恢复电流峰值降低了15 A/cm^(3),同时改善了器件的关断特性,关断时间减小了103 ns。相较于传统FS RC-IGBT,反向恢复峰值电流降低了33.3%,关断时间减小了9.93%。

A snapback-free reverse-conducting insulated gate bipolar transistor(RC-IGBT)is proposed,an N-type layer is added below the collector side field cutoff layer as a high-resistance layer and the N+collector part is replaced with a P-type thin layer,and the col-lector resistance is increased by the addition of the N-type high-resistance layer,and the collector cavity can be injected at the first time at the initial conduction with a P-type thin layer,eliminating the snapback phenomenon.The device’s reverse recovery current peak is reduced by 15 A/cm^(3),At the same time,the shutdown characteristics of the device are improved,and the shutdown time is reduced by 103 ns.Compared with the traditional FS RC-IGBT,the reverse recovery current peak is reduced by 33.3%,and the shutdown time is reduced by 9.93%.