热处理Hastelloy合金基带对生长NiO薄膜的影响

Effect of Heat Treatment of Hastelloy Alloy Substrate on the Growth of NiO Films

该研究采用射频磁控溅射方法在经过热处理的Hastelloy合金基带上生长NiO缓冲层,探究了不同退火条件对生长NiO缓冲层的结构和形貌的影响.XRD和AFM测试结果表明,在流氧中退火温度为850℃、退火时间为20min时可在基带表面形成一层连续的NiO薄膜,这能改善基带与缓冲层的晶格匹配,并提高随后同质外延生长NiO缓冲层的质量,使得基带能生长出强度高且呈纯C轴取向的NiO薄膜.该缓冲层能够给高温超导薄膜提供良好的生长环境.

This study grows NiO buffer layers on heat-treated Hastelloy alloy substrates by radio frequency magnetron sputtering,and investigates the effects of different annealing conditions on the structure and morphology of the grown NiO buffer layers.Results of the XRD and AFM test show that a consecutive NiO film can be formed on the surface of the substrate at an annealing temperature of 850°C and an annealing time of 20 minutes in flow oxygen,which can improve the lattice matching between the substrate and the buffer layer and can improve the quality of the subsequently homogeneously epitaxially grown NiO buffer layer,enabling the growth of NiO films with high strength and pure C-axis orientation in the substrate.The buffer layer can provide a good growth environment for high-temperature superconducting films.