基于InP HEMT的太赫兹分谐波混频器芯片设计

Design of Terahertz Sub-Harmonic Mixer Chip Based on InP HEMT

基于70 nm InP高电子迁移率晶体管(HEMT)工艺,研制了一款175~205 GHz分谐波混频器太赫兹单片集成电路(TMIC)。使用三线耦合Marchand巴伦实现本振信号的平衡-不平衡转换。在射频端口设计了紧凑型耦合线结构的带通滤波器,实现对射频信号低损耗带通传输的同时缩小了芯片尺寸。测试结果表明混频器在175~205 GHz频率范围内,单边带(SSB)变频损耗小于15 dB,典型值14 dB。混频器中频频带为DC~25 GHz,射频端口对本振二次谐波信号的隔离度大于20 dB。芯片尺寸为1.40 mm×0.97 mm,能够与相同工艺的功率放大器、低噪声放大器实现片上集成,从而满足太赫兹通信等不同领域的应用需求。

Based on the 70 nm InP high electron mobility transistor(HEMT)process,a 175-205 GHz sub-harmonic mixer terahertz monolithic integrated circuit(TMIC)was developed.A three-line coupling Marchand balun was used to realize the balance-imbalance conversion of LO signal.A compact coupling line bandpass filter was designed at the RF port to achieve low loss bandpass transmission of RF signal while reducing the chip size.The measurement results show that the single-sideband(SSB)con-version loss of the mixer is less than 15 dB in the frequency band of 175-205 GHz,and the typical value is 14 dB.The IF band of the mixer is DC-25 GHz,and the isolation of the second harmonic LO signal to RF port is greater than 20 dB.The chip size is 140 mm×097 mm,which can realize on-chip inte-gration with power amplifiers and low-noise amplifiers manufactured by the same process,so as to meet the application requirements of terahertz communication and other different fields.