半导体桥火工品的防静电与防射频设计

Anti-Static and Anti-RF Design of the Semiconductor Bridge Initiator

为提高半导体桥(SCB)火工品的防静电与防射频的双防能力,将静电加固器件瞬态电压抑制(TVS)二极管和射频加固器件负温度系数(NTC)热敏电阻同时集成入SCB火工品的结构中,并研究了上述组合器件对SCB火工品发火性能和抗电磁性能的影响规律。结果表明:集成防护器件后,SCB火工品的安全电流从1.2 A升至1.5 A;抗静电性能满足500 pF/500Ω/25 kV条件下不发火;在22μF/16 V的电容发火条件下,集成SCB火工品的平均爆发时间较SCB火工品增加了1.77μs。因此,该组合型防护器件可以在不改变SCB发火性能的基础上有效提高SCB的抗静电和抗射频的能力。

In order to improve the anti-static and anti-RF capability of semiconductor bridge(SCB),transient voltage suppression(TVS)diodes(electrostatic reinforcement device)and negative temperature coefficient(NTC)thermistors(RF reinforced device)were integrated into the SCB initiator.The influence of these combined devices on the ignition performance and electromagnetic resistance of the integrated SCB was studied.The results show that,after integrating protective devices,the safety current of SCB increases from 1.2 A to 1.5 A,and the anti-static performance meets the requirement of no ignition under 500 pF/500Ω/25 kV conditions.Under the condition of 22μF/16 V,the average explosion time of integrated SCB increases by 1.77μs compared to that of SCB.Therefore,this combined protective device can effectively improve the anti-static and anti-RF capabilities of SCB without changing its ignition performance.