一种基于开通栅极电压的新型IGBT键合线老化监测方法

A Novel Bonding Wires Aging Monitoring Method for IGBT Based on the Turn-on Gate Voltage

绝缘栅双极型晶体管(insulated gate bipolar transistors,IGBT)的可靠运行是牵引变流器安全和性能的重要保障。键合线老化作为IGBT的一种常见失效模式,对其进行监测具有重要意义。文中提出一种基于开通栅极电压ugem的键合线老化监测方法,该方法可有效避免温度和负载电流带来的影响。首先,基于IGBT等效电路模型,系统分析ugem受键合线断裂影响的原因;其次,利用双脉冲测试进行验证,同时对温度和负载电流带来的影响进行分析;在此基础上,考虑到使用ugem局部特征将受到温度和电流的干扰,提出将开通栅极电压整体波形用于键合线老化的监测,并进一步利用有监督的线性判别分析进行数据降维以及采用支持向量机实现键合线断裂根数的检测。最后,通过实验对所提监测方法的有效性进行验证。

Reliable operation of insulated gate bipolar transistors(IGBTs)is of high importance for safety and performance of traction converter.As a common failure mode of the IGBT,bonding wires aging monitoring is highly helpful.This paper proposes a novel aging monitoring method using the turn-on gate voltage(ugem),in which the effects of temperature and load current on the monitoring can be avoided.First,based on the equivalent circuit model of the IGBT,the behavior of ugem with bonding wire aging is thoroughly characterized.Then,the double-pulse experiments are carried out to verify the theoretical analysis,and the effects of temperature and load current are analyzed in detail.Considering that the ugem local features may be affected by temperature and load current,a bonding wire aging monitoring method using the entire waveform of the ugem is accordingly proposed,in which the supervised linear discriminant analysis(LDA)is used to reduce the dimensionality of data,and the support vector machine(SVM)is performed to detect the bond wire fracture.Finally,the effectiveness of the proposed method is verified by conducting experimental tests.