有源区掺杂的AlGaN基深紫外激光二极管性能优化

Performance optimization of AlGaN-based deep-ultraviolet laser diodes with doped active region

为了改善深紫外激光二极管的性能,本文提出了有源区量子势垒n掺杂、p掺杂和n-p掺杂三种结构.利用Crosslight软件,对原始结构和有源区掺杂的三种结构进行仿真研究,比较四种结构的P-I特性曲线、V-I特性曲线、载流子浓度、辐射复合速率和能带图.仿真结果表明,有源区量子势垒n-p掺杂结构的性能更优,其阈值电压和阈值电流分别为4.40V和23.8mA;辐射复合速率达到1.64×10^(28)cm^(-3)/s;同一注入电流下电光转换效率达到42.1%,比原始结构增加了3.9%;改善了深紫外激光二极管的工作性能.

In order to improve the operating performance of the deep-ultraviolet laser diodes(DUV-LD),three structures of n-doped,p-doped and n-p-doped with active region quantum barrier are proposed in this paper.Using Crosslight software,the original structure and the three active region doped structures are simulated and studied to compare the P-I characteristic curves,V-I characteristic curves,carrier concentrations,radiation recombination rates and energy band diagrams of the four structures.The simulation results show that the performance of n-p doped structure is better,i.e.,its threshold voltage and threshold current of the n-p doped structure decrease to 4.40 V and 23.8 mA,respectively;radiation recombination rate reaches 1.64cm-3/s;The electro-optical conversion efficiency reaches 42.1%at the same injection current,which increases 3.9%compared with the original structure and greatly improves the operating performance of the DUV-LD.