Al_(2)O_(3)层厚度对PbZrO_(3)/Al_(2)O_(3)异质结薄膜储能性能的影响

Effect of Al_(2)O_(3) layer thickness on energy storage performances of PbZrO_(3)/Al_(2)O_(3) heterostructure thin films

为了提高Pt/PbZrO_(3)/Pt电介质电容器的储能密度,通过热蒸镀和自然氧化方法在Pt/Ti/SiO_(2)/Si基板上沉积了厚度为0~10 nm的Al_(2)O_(3)(AO)层,采用化学溶液沉积法制备PbZrO_(3)薄膜,研究了Al_(2)O_(3)层厚度对PbZrO_(3)/Al_(2)O_(3)(PZO/AO)异质结薄膜储能性能的影响。结果表明:随着AO层厚度的增加,PZO/AO异质结薄膜的击穿电场强度逐渐增大,极化电场电滞回线由反铁电特征转变为铁电特征。当PZO/AO异质结薄膜的AO层厚度为5 nm时,储能密度最大值为21.2 J/cm^(3)。

In order to improve the energy storage density of Pt/PbZrO_(3)/Pt dielectric capacitors,PbZrO_(3)/Al_(2)O_(3) heterostructure thin films were prepared on the Pt/Ti/SiO_(2)/Si substrate,where the Al_(2)O_(3) layers with a thickness from 0 nm to 10 nm were deposited by thermal evaporation and natural oxidation methods.PbZrO_(3) films were prepared by a chemical solution deposition method,and the effect of Al_(2)O_(3) layer thickness on the energy storage performances of PbZrO_(3)/Al_(2)O_(3)(PZO/AO)heterostructure thin films was studied.The results show that the electrical breakdown strength of PZO/AO gradually increases with the AO layer thickness,and the characteristics of polarization versus electric field(P-E)hysteresis loop changes from antiferroelectric form to ferroelectric form.The maximum energy storage density of 21.2 J/cm^(3) can be achieved when the thickness of AO layer is 5 nm.