半导体桥火工品电磁响应及其防护技术仿真研究

Simulation Study on Electromagnetic Response and Protection Method of Semiconductor Bridge Pyrotechnics

为了研究半导体桥(SCB)火工品在连续电磁波、核电磁脉冲环境下的响应特性及防护技术,采用COMSOL仿真软件建立了SCB组件仿真模型,分别研究了并联瞬态电压抑制(TVS)二极管前后SCB组件在连续电磁波、核电磁脉冲照射状态下的感应电流和桥区温度的变化。结果表明:场强为1 200 V·m~(-1)、频率为1.15 GHz的连续电磁波以及上升时间为5 ns、半高宽为24 ns、幅值为10 k V·m~(-1)的核电磁脉冲照射,均可能使SCB桥区温度高于常用起爆药的作用温度,从而导致SCB火工品意外发火;并联TVS二极管对连续电磁波、核电磁脉冲均起到较好的防护效果,连续电磁波照射下SCB的感应电流峰值衰减率大于64.79%,核电磁脉冲照射下SCB桥区最高温度衰减率为54.34%。

In order to study the response characteristics and protection technology of semiconductor bridge(SCB)pyrotechnic devices in continuous electromagnetic wave and nuclear electromagnetic pulse environments,the SCB assembly simulation model was established using COMSOL simulation software,the induced current and bridge area temperature changes of SCB assemblys before and after paralleling transient voltage suppression(TVS)diodes under continuous electromagnetic wave and nuclear electromagnetic pulse irradiation were studied,respectively.The results show that under the irradiation of continuous electromagnetic wave with a field strength of 1200 V·m-1 and a frequency of 1.15 GHz,as well as nuclear electromagnetic pulses with a rise time of 5 ns,a half width of 24 ns and an amplitude of 10 kV·m-1,the SCB bridge area temperature may all be higher than the action temperature of commonly used explosives,leading to accidental ignition of SCB pyrotechnic devices.Paralleling TVS diode provides good protection against both continuous electromagnetic waves and nuclear electromagnetic pulses.The attenuation rate of peak induced current of SCB under continuous electromagnetic wave irradiation is greater than 64.79%,and the attenuation rate of highest SCB bridge area temperature under nuclear electromagnetic pulse irradiation is 54.34%.