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Giant 2D Skyrmion Topological Hall Effect with Ultrawide Temperature Window and Low-Current Manipulation in 2D Room-Temperature Ferromagnetic Crystals

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摘要 The discovery and manipulation of topological Hall effect(THE),an abnormal magnetoelectric response mostly related to the Dzyaloshinskii–Moriya interaction(DMI),are promising for next-generation spintronic devices based on topological spin textures such as magnetic skyrmions.However,most skyrmions and THE are stabilized in a narrow temperature window either below or over room temperature with high critical current manipulation.It is still elusive and challenging to achieve large THE with both wide temperature window till room temperature and low critical current manipulation.Here,using controllable,naturally oxidized sub-20 and sub-10 nm 2D van der Waals room-temperature ferromagnetic Fe_(3)GaTe_(2-x)crystals,we report robust 2D skyrmion THE with ultrawide temperature window ranging in three orders of magnitude from 2 to 300 K,in combination with giant THE of~5.4μΩ·cm at 10 K and~0.15μΩ·cm at 300 K,which is 1–3 orders of magnitude larger than that of all known room-temperature 2D skyrmion systems.Moreover,room-temperature current-controlled THE is also realized with a low critical current density of~6.2×10^(5)A·cm^(-2).First-principles calculations unveil natural oxidation-induced highly enhanced 2D interfacial DMI reasonable for robust giant THE.This work paves the way to room-temperature electrically controlled 2D THE-based practical spintronic devices.
作者 张高节 罗清源 文晓琨 武浩 杨丽 靳雯 李路吉 张佳 张文峰 舒海波 常海欣 Gaojie Zhang;Qingyuan Luo;Xiaokun Wen;Hao Wu;Li Yang;Wen Jin;Luji Li;Jia Zhang;Wenfeng Zhang;Haibo Shu;Haixin Chang(State Key Laboratory of Material Processing and Die&Mold Technology,School of Materials Science and Engineering,Huazhong University of Science and Technology,Wuhan 430074,China;Wuhan National High Magnetic Field Center and Institute for Quantum Science and Engineering,Huazhong University of Science and Technology,Wuhan 430074,China;College of Optical and Electronic Technology,China Jiliang University,Hangzhou 310018,China;School of Physics and Wuhan National High Magnetic Field Center,Huazhong University of Science and Technology,Wuhan 430074,China;Shenzhen R&D Center of Huazhong University of Science and Technology,Shenzhen 518000,China)
出处 《Chinese Physics Letters》 SCIE EI CAS CSCD 2023年第11期131-138,共8页 中国物理快报(英文版)
基金 supported by the National Key Research and Development Program of China(Grant No.2022YFE0134600) the National Natural Science Foundation of China(Grant Nos.52272152,61674063,and 62074061) Shenzhen Science and Technology Innovation Committee(Grant No.JCYJ20210324142010030) the Natural Science Foundation of Hubei Province(Grant No.2022CFA031) Interdisciplinary Research Program of Huazhong University of Science and Technology(Grant No.5003110122)。
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