摘要
针对锗硅异质结双极晶体管(SiGe HBT)器件的S参数是用于射频前端电路匹配设计的关键参数,提出一种测量SiGe HBT器件在多个不同温度下的S参数获取该器件低温S参数的计算方法。首先建立SiGe HBT器件在已知直流偏置下的T型小信号电路模型,然后采用常温下测量的器件S参数提取模型中与温度相关性极小的非本征部分元件值作为常量,再测量多个不同温度下的器件S参数构建器件所有本征部分元件参数与温度的近似线性表达式,逐个计算指定低温下所有本征部分元件参数,最后在已知全部参数的T型小信号模型中计算SiGe HBT器件在该低温下的S参数。实验显示该方法计算的低温S参数与测试值有良好的一致性。理论上该计算方法适用的最低温度达到-73℃。
Aiming at the SiGe HBT device S parameters is the key parameter used in rf front-end circuit matching design,the method to calculate the S parameters of the SiGe HBT device at low temperature by measuring S parameters of this device at different temperatures is presented.Firstly,the overall T-type small signal circuit model of SiGe HBT device is established under known DC bias.Secondly,the values of the non-intrinsic parts in the model which have little correlation with temperature are extracted as constants with the S parameters of the device measured at room temperature.Then the approximate linear law between the all element parameters of the intrinsic parts and temperature is obtained according to the measured S parameters of device at different temperatures,and the values of all the components in the intrinsic parts at specified low temperatures are calculated one by one.Finally,the S parameters of SiGe HBT device at the specified low temperature are calculated by the T-shaped small signal model with all the known parameters.Comparison of the calculated S parameters by this method and measured S parameters at the specified low temperature shows good agreement.Theoretically,the lowest temperature suitable for this method were-73℃.
作者
魏正华
叶小兰
WEI Zhenghua;YE Xiaolan(School of Electronic and Information Engineering,Changsha Social Work College,Changsha 410000,China;Environmental Monitoring Department,Changsha Environmental Protection College,Changsha 410000,China)
出处
《核电子学与探测技术》
CAS
北大核心
2023年第5期992-999,共8页
Nuclear Electronics & Detection Technology
基金
湖南省教育厅科学研究项目“基于Mesh通信的智慧环境监测系统的研究与应用”(23B1108)
湖南省教育厅科学研究项目“宽阻带高抑制小型腔体滤波器的研究与实践”(22C1436)
长沙民政职业技术学院校级自科研究项目(23mypy08)。
