基于量子力学效应的多子带MOS器件修正系统

A Correction System for MultiSubband MOS Devices Based on Quantum Mechanical Effects

对于MOS器件隧穿电流的测量及修正,通过自洽解的方式运算复杂且时效较低。以表面势解析为基础,提出多子带向单子带等效的方案。通过向单子带的等效,大量减少对应的拟合参数,简化运算步骤,提高精度。同时经过算例验证,方案切实可行,并与自洽解方式进行对比,提高了计算的时效性,具备更高的精确性及普适性。同时,将隧穿模型用于不同栅介质材料的测量,并与实际数据进行对比,结果吻合度高,更加适用于MOS器件修正模拟。

For the measurement and correction of tunneling current of MOS devices, the calculation by self-consistent solution is complex and the aging is low. Based on the surface potential analysis, a scheme for the equivalence of multi-subband to monoband is proposed. By equivalently to the single subband, the corresponding fitting parameters are greatly reduced, the operation steps are simplified, and the accuracy is improved. At the same time, the scheme is verified by example, and compared with the self-consistent solution method, the timeliness of the calculation is improved, and it has higher accuracy and universality. At the same time, the tunneling model is used for the measurement of different gate dielectric materials, and the actual data is compared, and the results have a high degree of agreement, which is more suitable for MOS device correction simulation.