碳化硅压力传感器欧姆接触电阻率的测量方法

Measurement Method of Ohmic Contact Resistivity of Silicon Carbide Pressure Sensor

鉴于碳化硅离子扩散系数低、杂质离化能高,难以形成可靠的欧姆接触,为了解决碳化硅压力传感器芯片的高温欧姆接触可靠性问题,对其电阻率测量问题进行探讨。通过对T-LTM测试原理的介绍与分析,结合芯片生产工艺流程,制备Ni/Au电极与N型碳化硅的T-LTM测试图形,在氮气氛围下进行了700℃和1000℃的合金实验。最终实验结果显示合金温度对I-V线性关系的显著影响,结合T-LTM测试分析,测定接触电阻率值,验证是否形成良好的欧姆接触。该研究为碳化硅压阻式高温压力传感器的开发提供了技术参考。

In view of the low ion diffusion coefficient and high impurity ionization energy of silicon carbide,it is difficult to form reliable ohmic contact.In order to solve the problem of high temperature ohmic contact reliability of silicon carbide pressure sensor chip,the resistivity measurement problem is discussed.By introducing and analyzing the principle of T-LTM test,and combining with the chip production process,the T-LTM test pattern of Ni/Au electrode and N-type silicon carbide is prepared,and the alloy experiments at 700℃and 1000℃are carried out in nitrogen atmosphere.The final experimental results show that the alloy temperature has a significant influence on the I-V linear relationship.Combined with T-LTM test and analysis,the contact resistivity value is determined to verify whether a good ohmic contact is formed.The study provides a technical reference for the development of silicon carbide piezoresistive high temperature pressure sensor.