10~20GHz宽带低噪声放大器的设计和实现

Design and Implementation on 10~20GHz Wideband Low Noise Amplifier

阐述一款采用0.25 GaAs pHEMT工艺、基于MMIC技术的10~20GHz宽带低噪声放大器设计。联合仿真结果表明,带内增益高达28dB,噪声系数低于1.9dB,输入和输出回波损耗均低于-15dB。该芯片具有宽带宽、集成度高和功耗低的特点。

This paper describes the design of a 10~20GHz broadband low noise amplifier based on MMIC technology,using 0.25 GaAs pHEMT technology.The co-simulation results show that the inband gain is up to 28dB,the noise factor is lower than 1.9dB,and the input and output return loss are lower than-15dB.The chip has the characteristics of wide broadband,high integration and low power consumption.