40mΩ 1200V碳化硅场效应器件的设计

Design on 1 200V 40mΩ Silicon Carbide MOSFET Fabrication

阐述一款40mΩ1 200V碳化硅场效应管的设计,可用于电源PFC应用,采用沟道自对准工艺,经过JFET注入、元胞、终端、面积等优化,最终碳化硅场效应管反向耐压大于1 500V,漏电流小于100μA,同时碳化硅场效应管导通电流大于66A,阈值电压>2.3V,最高工作结温高于150℃。

This paper describes the fabrication of a 1200V 40mΩsilicon carbide power MOSFET for power PFC applications.It was manufactured by channel self-alignment process,design with JFET implant optimize,cell optimize,termination optimize,size optimize,then a 4H-SiC power MOSFET with DC continuous drain current greater than 66A is fabricated,Drain-source breakdown voltage is greater than 1500V,zero gate voltage drain current is less than 100μA,and threshold voltage is greater than 2.3V,and the maximum operation junction temperature is greater than 150℃.