摘要
阐述一款40mΩ1 200V碳化硅场效应管的设计,可用于电源PFC应用,采用沟道自对准工艺,经过JFET注入、元胞、终端、面积等优化,最终碳化硅场效应管反向耐压大于1 500V,漏电流小于100μA,同时碳化硅场效应管导通电流大于66A,阈值电压>2.3V,最高工作结温高于150℃。
This paper describes the fabrication of a 1200V 40mΩsilicon carbide power MOSFET for power PFC applications.It was manufactured by channel self-alignment process,design with JFET implant optimize,cell optimize,termination optimize,size optimize,then a 4H-SiC power MOSFET with DC continuous drain current greater than 66A is fabricated,Drain-source breakdown voltage is greater than 1500V,zero gate voltage drain current is less than 100μA,and threshold voltage is greater than 2.3V,and the maximum operation junction temperature is greater than 150℃.
作者
刘旭
杨承晋
兰华兵
刘涛
LIU Xu;YANG Chengjin;LAN Huabing;LIU Tao(Shenzhen SGKS Technology Co.,Ltd.,Guangdong 518000,China)
出处
《集成电路应用》
2023年第12期38-40,共3页
Application of IC
关键词
碳化硅
场效应管
功率器件
silicon carbide(SiC)
MOSFET
power device