650V10A碳化硅二极管器件的设计

Design on 650V 10A Silicon Carbide MPS Fabrication

阐述一款用于电源PFC应用的650V 10A碳化硅二极管的设计,采用MPS结构,经过元胞尺寸、终端、面积等优化,最终碳化硅二极管反向耐压大于720V,漏电流小于10μA,正向压降小于1.27V,同时碳化硅二极管导通电流大于10A(TC=155℃)。

This paper describes the fabrication of a 650V 10A silicon carbide diode for power PFC applications.It was manufactured on MPS structure,design with cell optimize,termination optimize,size optimize,etc.,then a 4H-SiC power MPS with the repetitive peak reverse voltage is greater than 720V,the reverse current is less than 10μA,the forward voltage is less than 1.27V,and the continuous forward current is greater than 10A(TC=155℃).