共焦式磁控溅射设备研制及工艺验证

Development and Process Validation of Confocal Magnetron Sputtering Equipment

通过分析InP基激光器和探测器芯片电极金属薄膜工艺需求与特性,采用多靶共焦结构,多梯度真空等设计优化了专用磁控溅射系统,实现晶圆复合膜层沉积,晶圆台面或沟槽图形良好的覆盖性。针对标准100 mm(4英寸)InP基片的生产需求,满足100 mm片剥离工艺的低温溅射成膜要求设计工艺试验。实验结果表明,所沉积的金属薄膜均匀性优于5%,台阶覆盖比大于0.3,满足InP基晶圆薄膜沉积和表面覆盖层制备工艺需求。

Through the analysis of InP-based lasers and detector chip electrode metal thin film process needs and characteristics,the use of multi-target confocal structure,multi-gradient vacuum,and other design optimization of the special magnetron sputtering system,to achieve the wafer composite film layer deposition,wafer table or trench graphics good coverage.For standard 100 mm(4-inch)InP substrate production needs to meet 100 mm wafer stripping process of low temperature sputtering film formation requirements design process test.Experimental results show that the uniformity of the deposited metal film is better than 5%,the step coverage ratio is greater than 0.3,to meet the InP-based wafer film deposition and surface coverage layer preparation process requirements.