蒙特卡罗粒子输运模拟在离子注入研发中的应用

Application of Monte Carlo Particle Transportation in Ion Implantation Research

离子注入材料的微观过程和现象,如射程分布、能量损失、溅射和次级射线产生,通过实验手段通常难以直接观察,采用蒙特卡罗粒子输运计算方法,可以较为直观地对相关过程进行计算和展示。使用蒙特卡罗粒子输运程序SRIM和FLUKA计算分析离子注入过程中涉及到的射程分布、能量损失、溅射率、X射线分布等参数,证明蒙特卡罗方法可以有效地用于离子注入相关的设备和工艺设计。

Phenomena related with the stopping of ions in matter,such as the distribution of range,energy deposition,sputtering and secondary radiation,impose significant influence on the instrumental and processing design of ion implantation.The dynamical observation of these atomic process is highly challenging via experimental means and thus Monte Carlo particle transport simulation offers a way for these researches.Base on Monte Carlo simulation package Stopping and Range of Ions in Matter(SRIM)and Fluktuierende Kaskade(FLUKA),particle transportation processes,such as range,energy loss,sputtering yield and X-ray generation are calculated to prove the usability of this method in ion implantation engineering.