650 V高压型超结结构MOSFET器件设计与性能研究

Design and Performance of 650 V High-Voltage Superjunction MOSFET

功率MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor)作为绝缘栅控制的开关型器件,因其功率大,驱动简单,应用越来越广泛。采用深槽刻蚀填充技术设计的650 V高压型超结结构MOSFET器件,主要应用于汽车充电桩等电源管理,力求在保持参数不变的前提下,优化导通电阻。通过工艺仿真技术测试功率MOSFET器件的性能,研究了槽偏移距离以及掺杂浓度对导通电阻和击穿电压的关系。结果表明,槽偏移会导致超结部分的电荷不平衡,槽偏移不论正负,只要是在同一水平位置,那么两者的总电荷数就是不同的。在柱宽不变的情况下,随着浓度的增加,其击穿电压和导通电阻都缓慢下降,并且导通电阻随着掺杂浓度的提高而降低。本研究对半导体领域器件设计优化和提升具有一定的参考意义。

Power MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor)is a switch-type device controlled by an insulated gate.It has been widely used due to its high power capability and simple drive requirements.In this study,a 650V high-voltage superjunction MOSFET device was designed using deep trench etching and filling techniques.The device is mainly applied in power management for applications such as electric vehicle charging stations.The goal is to optimize the on-resistance while maintaining the same device parameters.The functionality of the power MOSFET device was verified through process simulation techniques.The relationship between the trench offset distance,doping concentration,on-resistance,and breakdown voltage was investigated.The results showed that the trench offset could cause charge imbalance in the superjunction region.Regardless of its polarity,as long as the trench offset occurs at the same horizontal position,the total charge in the super junction region would be different.With a constant pillar width,increasing the doping concentration resulted in a gradual decrease in both breakdown voltage and on-resistance.Furthermore,the on-resistance decreased as the doping concentration increased.This study provides valuable insights for optimizing and improving device design in the field of semiconductors.