过渡金属(TM=V,Cr,Mn,Fe,Co,Ni)掺杂GeSe的高温铁磁半导体薄膜

Transition metal(TM=V,Cr,Mn,Fe,Co,Ni)-doped GeSe diluted magnetic semiconductor thin films with high-temperature ferromagnetism

具有高温铁磁性的IV族金属硫族化物磁性半导体薄膜是半导体自旋电子器件所需要的重要材料.本文采用固体源化学气相沉积法制备了一系列过渡金属元素(TM=V,Cr,Mn,Fe,Co和Ni)掺杂GeSe的多晶半导体薄膜样品.磁性测量表明,Mn,Fe和Co掺杂的GeSe薄膜表现出较强的铁磁性,居里温度(TC)分别高达277,255和243 K,而V,Cr和Ni掺杂GeSe的多晶薄膜表现出较弱的铁磁性.磁电输运测量表明,Mn,Fe和Co掺杂GeSe的多晶薄膜具有相对较高的空穴浓度,在300 K下高达~1020cm^(-3).基于实验和计算结果的进一步分析表明,Mn,Fe和Co掺杂GeSe的多晶薄膜中的强铁磁性归因于载流子增强的Ruderman-KittelKasuya-Yosida相互作用.我们的研究结果展示了过渡金属掺杂GeSe的磁性半导体薄膜的丰富多样性,并为相关基础研究和器件应用提供了一个新平台.

Group-IV metal chalcogenides-based diluted magnetic semiconductor(DMS)thin films with high-tem-perature ferromagnetism(FM)are desirable for semi-conductor spintronic devices.In this paper,transition-metal(TM=V,Cr,Mn,Fe,Co and Ni)-doped GeSe polycrystalline films are deposited by solid-source chemical vapor deposition(CVD).Magnetic measurements reveal that Mn-,Fe-and Co-doped GeSe films exhibit robust FM with Curie temperatures(TC)up to 277,255 and 243 K,respectively,whereas V-,Cr-and Ni-doped GeSe films show weak FM.Magneto-transport measurements show that Mn-,Fe-and Co-doped GeSe films possess relatively high hole concentrations up to~1020 cm^(-3) at 300 K.Further analysis based on experimental and calculation results shows that the robust FM in Mn-,Fe-and Co-doped GeSe films is attributed to the carrier-enhanced Ruderman-Kittel-Kasuya-Yosida interaction.Our results give insights into the rich variety in TM-doped GeSe DMS thin films and offer a new platform for related fundamental research and device applications.