三结砷化镓太阳能电池外延层表面抛光技术研究

Study on Surface Polishing Technology of Epitaxial Layer of Three-Junction Gallium Arsenide Solar Cell

以空间用三结砷化镓(GaAs)电池外延表面抛光为研究对象,对抛光压力、抛光转速、抛光液pH等参数进行试验研究。研究结果表明:选用抛光压力40 g/cm^(3),采用55 r/min的转速,有效氯含量为5%的抛光液,对三结砷化镓太阳能电池外延表面有良好的抛光效果,可得到良好的表面颗粒度,即表面粗糙度小于0.4 nm、颗粒粒径大于0.2μm(含0.2/μm)的数量低于50个,颗粒粒径小于0.2μm的数量低于100个的外延片表面,为键合技术用于三结砷化镓太阳能电池的批量生产提供了可能。

The epitaxial surface polishing of space three-junction gallium arsenide(GaAs)cell was taken as the research object.The parameters such as polishing pressure,polishing speed and pH value of polishing liquid were studied.The results show that the polishing liquid with a polishing pressure of 40 g/cm^(3),a rotating speed of 55 r/min and an effective chlorine content of 5%can be used to obtain a good polishing effect on the epitaxial surface of the three-junction GaAs solar cell.The surface roughness of 0.4 nm and the granularity of less than 50 particles with a particle size greater than 0.2/μm and of less than 100 particles with a particle size less than 0.2/μm can be obtained,which provides a possibility for the mass production of three-junction gallium arsenide solar cells by bonding technology.