期刊文献+

含ZnO的TiO_(2)压敏器件的失效分析

Failure analysis of TiO2 varistor devices containing ZnO
下载PDF
导出
摘要 氧化锌掺杂的氧化钛压敏陶瓷器件经烧结后,观察到器件表面发生氧化锌析出和氧化锌晶须的形成,导致器件功能失效。经过深入分析,这一问题的根本原因在于烧结炉壁表面沉积的碳颗粒脱落并附着在陶瓷器件表面,形成了一处还原性气氛。这一还原性气氛对氧化锌产生了影响,将其还原为液态锌,随后液态锌上浮到陶瓷器件表面,再次氧化,形成氧化锌的暗斑。随着液态锌的蒸发,它重新氧化,并在氧化锌晶核上有序生长,最终形成了氧化锌晶须。这一结果有助于深化对含氧化锌压敏陶瓷器件的失效行为理解。 When zinc oxide is doped into oxide titanium varistor ceramic devices and subjected to sintering,the observation reveals the precipitation of zinc oxide and the formation of zinc oxide whiskers on the surface of the device,leading to failure of the device.With in-depth analysis,we have concluded that the fundamental cause of this issue is that the carbon particles deposited on the sintering furnace wall fell off and then adhered to the surface of the ceramic device,resulting in reducing atmosphere in that specific area.This reducing atmosphere has induced the reduction of the zinc oxide into liquid zinc,which subsequently rise up to the surface of the ceramic device and re-oxidized into dark zinc oxide spots.With the evaporation and re-oxidation of the liquid zinc,selectively grows on the zinc oxide nuclei happened and formed zinc oxide whiskers.This result contributes to a deeper understanding of the failure behavior in ceramic devices containing zinc oxide.
作者 陈赟 周军连 贾豪 胡永达 CHEN Yun;ZHOU Junian;JIA Hao;HU Yongda(School of Integrated Circuit Science and Engineering,University of Electronic Science and Technology of China,Chengdu611731,China;CEPREI,Guangzhou 510610,China)
出处 《电子元件与材料》 CAS 北大核心 2023年第11期1320-1323,共4页 Electronic Components And Materials
基金 四川省重点研发项目(2023YFG0215)。
关键词 氧化锌 还原性气氛 暗斑 晶须 zinc oxide reductive atmosphere dark spot whisker
  • 相关文献

参考文献5

二级参考文献35

  • 1朱建锋,罗宏杰.Pr_6O_(11)掺杂ZnO压敏材料的烧结过程[J].陕西科技大学学报(自然科学版),2004,22(5):100-105. 被引量:7
  • 2Xiaosheng FANG Lide ZHANG.Controlled Growth of One-Dimensional Oxide Nanomaterials[J].Journal of Materials Science & Technology,2006,22(1):1-18. 被引量:8
  • 3Mei Yu Jianhua Liu Songmei Li.Preparation and characterization of highly ordered NiO nanowire arrays by sol-gel template method[J].Journal of University of Science and Technology Beijing,2006,13(2):169-173. 被引量:3
  • 4宫林进.电压非线性电阻材料的制造方法[P].特公昭58—49003.1983.
  • 5宫林进.电压非线性电阻材料及其用于噪音消除的元件[P].特公昭58—6286.1983.
  • 6江涛.半导体敏感材料与器件[M].广州:华南理工大学,2002..
  • 7Yang S L, Wu J M. Influence of sintering time on (Ba, Bi,Nb)-added TiO2ceramic varistor [J]. J Mater Sci Lett, 1995, 14: 748-751.
  • 8Santhosh P N, Kharat D K, Date S K. Effect of strontium substitution in (Nb,Bi) doped TiO2 varistors [J]. Mater Lett, 1996, 28: 37--41.
  • 9Yang S L, Wu J M. Effects of Nb2O5 in (Ba,Bi,Nb)-added TiO2 ceramic varistor [J]. J Mater Res, 1995, 10(2): 345-352.
  • 10Yan M F. Rhodes W W. Preparation and properties of TiO2 varistors [J].Appl Phys Lett, 1982, 40(6): 536-537.

共引文献23

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部