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Growth and characterization of Bi(110)/CrTe_(2) heterostructures:Exploring interplay between magnetism and topology

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摘要 The interplay between topology and magnetism is vital for realizing exotic quantum phenomena,significant examples including quantum anomalous Hall effect,axion insulators,and high-order topological states.These states host great potential for future applications in high-speed and low-consumption electronic devices.Despite being extensively investigated,practical platforms are still scarce.In this work,with molecular beam epitaxy(MBE),we provide the first experimental report on high-quality Bi(110)/CrTe_(2) magnetic heterostructure.By employing in-situ high-resolution scanning tunneling microscopy,we are able to examine the interaction between magnetism and topology.There is a potential edge state at an energy level above the Fermi level,but no edge states observed near the Fermi level The absence of high-order topological corner states near EF highlights the importance of lattice matching and interface engineering in designing high-order topological states.Our study provides key insights into the interplay between two-dimensional magnetic and topological materials and offers an important dimension for engineering magnetic topological states.
作者 袁震宇 杨发枝 吕佰晴 黄耀波 钱天 徐金朋 丁洪 Zhenyu Yuan;Fazhi Yang;Baiqing Lv;Yaobo Huang;Tian Qian;Jinpeng Xu;Hong Ding(Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences(CAS),Beijing 100190,China;School of Physical Sciences,University of Chinese Academy of Sciences,Beijing 100190,China;Tsung-Dao Lee Institute and School of Physics and Astronomy,Shanghai Jiao Tong University,Shanghai 200240,China;Shanghai Synchrotron Radiation Facility,Shanghai Advanced Research Institute,Chinese Academy of Sciences,Shanghai 201204,China;Songshan Lake Materials Laboratory,Dongguan 523808,China;CAS Center for Excellence in Topological Quantum Computation,University of Chinese Academy of Sciences,Beijing 100190,China;School of Physics,Shandong University,Ji’nan 250100 China)
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2024年第2期449-455,共7页 中国物理B(英文版)
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