氮化硅陶瓷基板制备及其金属化研究

Study on preparation and metallization of Si_(3)N_(4)ceramic substrate

低成本制备Si_(3)N_(4)陶瓷基板及其金属化是Si_(3)N_(4)陶瓷在电子行业应用中面临的关键问题。对Si_(3)N_(4)陶瓷流延成型配方体系进行了研究,系统分析了分散剂、黏结剂、增塑剂与固含量等因素对流延膜性能的影响,提出了一种优化的固含量为42%的配方体系,其流延膜相对密度达79.3%。经硅粉氮化后烧结得到的Si_(3)N_(4)陶瓷相对密度≥95%,抗弯强度达(852.7±48.8)MPa,热导率达75.5 W/(m·K)。采用丝网印刷工艺印制钨金属化浆料,经热压叠层与共烧结,得到金属层与Si_(3)N_(4)基板均平直完整、无翘曲、无缺陷的Si_(3)N_(4)金属化陶瓷,经测量发现其结合强度为27.84 MPa,金属层方阻为104 mΩ/sq。研究结果表明,采用流延成型和丝网印刷工艺,经烧结工艺可以制备Si_(3)N_(4)高温多层共烧基板(HTCC)。

The low-cost preparation of Si_(3)N_(4) ceramic substrate and its metallization are the key issues faced by the application of Si_(3)N_(4) ceramics in the electronics industry.The system of Si_(3)N_(4) ceramic tape casting formulation was studied,and the effects of dispersant,binder,plasticizer and fraction of solid volume on the performance of the casting film were systematically analyzed.An optimized formulation system with solid volume fraction of 42%was proposed,and the relative density of the casting film reached 79.3%.The relative density of Si_(3)N_(4) ceramics obtained by sintering after silicon powder nitriding is more than 95%,the bending strength reaches(852.7±48.8)MPa,and the thermal conductivity reaches 75.5 W/(m·K).Tungsten metallized paste was printed using screen printing technology.After hot pressing lamination and co-sintering,Si_(3)N_(4) metallized ceramics with straight and complete metal layer were obtained,which were straight,intact,without warping and defects.The bonding strength was 27.84 MPa after mea-surement,and the square resistance of the metal layer was 104 mΩ/sq.The results show that Si_(3)N_(4) high temperature multilayer co-fired substrate(HTCC)can be prepared by tape casting and screen printing process.