TOPCon太阳电池电子选择性接触研究

RESEARCH ON ELECTRON SELECTIVE CONTACT OF TOPCon SOLAR CELLS

通过Afors-Het软件模拟建立TOPCon太阳电池模型,系统分析隧穿氧化SiO_(2)层厚度、n^(+)poly-Si层掺杂浓度、背金属电极功函数以及SiO_(2)/n^(+)poly-Si侧的能带偏移量对TOPCon太阳电池性能的影响。结果表明:SiO_(2)/n^(+)poly-Si叠层钝化结构能实现较好的电子选择性传输性能,当SiO_(2)层厚度为1.1 nm、n^(+)poly-Si层掺杂浓度为1×10^(20)cm^(-3)时,是最佳工艺窗口,且显示出改善电子选择性传输层对于TOPCon太阳电池效率提升的巨大潜力。

Through Afors-Het simulation software,the TOPCon solar cell model is established and the effects of tunneling through the oxide SiO_(2) layer thickness,n^(+)poly-Si layer doping concentration,back-metal electrode work function and energy band offset of the SiO_(2)/n^(+)poly-Si side on the performance of TOPCon solar cells are systematically analyzed.The simulation results show that the SiO_(2)/n^(+)poly-Si stacked passivation structure can achieve better electron selective transport performance.It is the best process window when the thickness of the SiO_(2) layer is 1.1 nm and the doping concentration of the n^(+)poly-Si layer is 1×10^(20) cm^(-3).It also shows the great potential of improving the electron selective transport layer for the efficiency improvement of TOPCon solar cells.