硅基太赫兹功率放大器研究进展

Research and Progress in Silicon⁃based Terahertz Power Amplifiers

太赫兹技术在探测、成像及通信等领域已展现出良好的应用前景,硅基太赫兹系统因为具有低成本、小尺寸、高集成度及易于实现大规模阵列化的优点受到广泛关注。太赫兹功率放大器是硅基太赫兹系统中的重要模块,决定系统的能耗、最大辐射距离和信号质量,近年来硅基太赫兹功率放大器设计得到了长足的发展。本文将从太赫兹技术的应用场景与功率放大器在太赫兹收发系统中的地位、硅基太赫兹功率放大器的关键技术指标和设计难点、基于CMOS/CMOS SOI工艺的太赫兹功率放大器研究进展、基于SiGe工艺的太赫兹功率放大器研究进展四个方面对硅基太赫兹功率放大器的研究现状和技术发展趋势进行综述总结。

With the promising application prospects of terahertz technology in fields such as detec⁃tion,imaging,and communication,silicon-based terahertz systems have attracted widespread atten⁃tion due to their advantages of low cost,small size,high integration,and easy implementation of large-scale arrays.Silicon-based terahertz power amplifiers(PAs)are important modules in siliconbased terahertz systems,which determine the energy consumption,maximum radiation distance,and signal quality of the system.In recent years,the design of silicon-based terahertz PAs has made signifi⁃cant progress.This article will summarize the research status and technological development trend of silicon-based terahertz PAs from four aspects:The application scenarios of terahertz technology and the position of PAs in terahertz transceiver,the key technical indicators and design difficulties of sili⁃con-based terahertz PAs,the progress of terahertz PAs based on CMOS/CMOS SOI processes,and the progress of terahertz PAs based on SiGe processes.