Bi_(2)O_(2)Se纳米线的生长及其超导量子干涉器件

Growth of Bi_(2)O_(2)Se nanowires and their superconducting quantum interference devices

Bi_(2)O_(2)Se是一种新型半导体材料,具有载流子迁移率高、空气中稳定和自旋轨道耦合强等优点,并且其合成方法多种多样,应用范围十分广泛.但已有研究大多集中在其二维薄膜,本文介绍一种使用三温区管式炉通过化学气相沉积生长Bi_(2)O_(2)Se一维纳米线的方法,研究了云母衬底处于水平方向不同位置以及竖直方向不同高度对Bi_(2)O_(2)Se纳米线生长的影响,并归纳出适于其生长的优化条件.之后,基于生长的Bi_(2)O_(2)Se纳米线构建了超导量子干涉器件,并观测到随磁场的超导量子干涉,为拓宽Bi_(2)O_(2)Se纳米线的应用提供了思路.

Bi_(2)O_(2)Se is a new type of semiconductor material,which has the advantages of high carrier mobility,air stability,strong spin-orbit coupling,etc.It has a variety of synthesis methods and a wide range of applications.In the past few years,many explorations have been made in the synthesis,large-size growth,and applications of Bi_(2)O_(2)Se.It has been applied to field effect transistors,infrared photodetectors,semiconductor devices,heterojunctions,spin electronics,etc.Since nanowire has a larger surface area-to-volume ratio than nano-film,nanowire may have greater advantages in gate regulation and strong spin-orbit coupling,and these properties can play a crucial role in certain fields.However,most of the studies focused on its two-dimensional films,and there are less researches of its one-dimensional counterpart.In this work,a method of growing Bi_(2)O_(2)Se one-dimensional nanowires by chemical vapor deposition in a three-temperature-zone tubular furnace is introduced.High-quality suspended Bi_(2)O_(2)Se nanowires are obtained.In addition,the effects on the Bi_(2)O_(2)Se nanowire growth of the position of the mica substrates,i.e,different horizontal positions and vertical heights in the quartz boat,are studied,and the optimal conditions for the growth are summarized.The nanowires are characterized by atomic force microscope and energy dispersive spectrometer to show the information about the size and component.Then,superconducting quantum interference device based on the Bi_(2)O_(2)Se nanowires is constructed,and the superconducting quantum interference in a magnetic field is observed,which provides a way to broaden the application of Bi_(2)O_(2)Se nanowires.