摘要
Self-powered ultraviolet photodetectors(UVPDs)provide great possibility for the next-generation energy conservation optical communication technology;while the high photodetection performance at zero bias is still a tremendous challenge.Herein,ntype GaN film with Si-doping concentration of~1018cm^(-3)and p-type organic PEDOT:PSS were adopted to construct a planar hybrid heterojunction via the simple spin-coating method.Profited from typical type-Ⅱenergy band alignment and giant photovoltaic effect at GaN/PEDOT:PSS inorganic-organic interface,the fabricated UVPD achieved excellent self-powered photoelectrical properties in dual-band with large R of 0.96 A/W(2.8 A/W),superior D*of 5.7×1012Jones(1.7×10^(13)Jones),prominent EQE of 325%(1371%),high on/off ratio of 9.65×10^(3)(6.15×10^(3))and fast rise/decay time of 60.7/124.5 ms(30.9/26.7 ms)for UVA(UVC)band,as well as outstanding UV/visible rejection ratio and great detection repeatability.Functioned as an optical signal receiver,this designed self-powered UVPD decoded a message of“NJUPT”from a simple optical communication system.These results open a new avenue for GaN/PEDOT:PSS heterojunction in UV communications and related applications.
基金
supported by the National Key Research and Development Program of China(Grant No.2022YFB3605404)
the Joint Funds of the National Natural Science Foundation of China(Grant No.U23A20349)
the National Natural Science Foundation of China(Grant No.62305171)
the Natural Science Foundation of Jiangsu Province(Grant No.BK20230361)
the Natural Science Foundation of Jiangsu Higher Education Institutions(Grant No.23KJB510017)
the Natural Science Research Start-up Foundation of Recruiting Talents of NJUPT(Grant Nos.XK1180922062,XK1060921002)。
