摘要
Hydrogen is considered one of the most ideal future energy carriers.The safe storage and convenient transportation of hydrogen are key factors for the utilization of hydrogen energy.In the current investigation,two-dimensional vanadium carbide(VC) was prepared by an etching method using V_(4)AlC_(3) as a precursor and then employed to enhance the hydrogen storage properties of MgH_(2).The studied results indicate that VC-doped MgH_(2) can absorb hydrogen at room temperature and release hydrogen at 170℃. Moreover,it absorbs 5.0 wt.%of H_(2) within 9.8 min at 100℃ and desorbs 5.0 wt.% of H_(2) within 3.2 min at 300℃.The dehydrogenation apparent activation energy of VC-doped MgH_(2) is 89.3 ± 2.8 kJ/mol,which is far lower than that of additive-free MgH_(2)(138.5 ± 2.4 kJ/mol),respectively.Ab-initio simulations showed that VC can stretch Mg-H bonds and make the Mg-H bonds easier to break,which is responsible for the decrease of dehydrogenation temperature and conducive to accelerating the diffusion rate of hydrogen atoms,thus,the hydrogen storage properties of MgH_(2) are remarkable improved through addition of VC.
基金
supported by the National Natural Science Foundation of China (Grant Nos.52261038 and 51861002)
the Natural Science Foundation of Guangxi Province (Grant No.2018GXNSFAA294125)
the Innovation-driven Development Foundation of Guangxi Province (Grant No.AA17204063)
support by the Ministry of Science and Higher Education of the Russian Federation in the framework of the Increase Competitiveness Program of NUST "MISiS" (grant number K2-2020-046)。