3300 V高性能混合SiC模块研制

Development of 3300 V High-performance Hybrid SiC Module

将Si基绝缘栅双极型晶体管(Insulated gate bipolar transistor,IGBT)芯片与SiC结型势垒肖特基二极管芯片按照双开关电路结构排布,开发了一种3 300 V等级混合SiC模块,对其设计方法、封装工艺、仿真、测试结果进行分析,并对标相同规格IGBT模块。混合SiC模块低空洞率焊接满足牵引领域高温度循环周次的要求,冗余式的连跳键合结构可以有效增强功率循环能力。采用双脉冲法测试动态性能,测试结果表明该混合SiC模块反向恢复时间减小了84%,反向恢复电流减小了89.5%,反向恢复能量减小了99%,一次开关产生的总损耗降低了43.3%。混合SiC模块消除了开关过程中电压和电流过冲现象,在高电压、大电流和高频率的应用工况下具有明显的优势。

A 3300 V hybrid SiC module was developed based on the arrangement of Si insulated gate bipolar transistor chip and SiC junction barrier Schottky chip according to dual switch circuit struc-ture.The design method,packaging process,simulation and test results were analyzed.The hybrid SiC module was compared to IGBT module of the same specification.The low soldering voids of the hybrid SiC module meet the requirements of high temperature cycling capacity in the traction field.The redundant skip bonding structure can effectively enhance the power cycling ability.The dynamic performance was tested by double pulse circuit.The test results show that the recovery time,the re-covery current,the recovery energy and the power loss of one primary switch in hybrid SiC module were reduced by 84%,89.5%,99%and 43.3%,respectively.The voltage and current overshoots during switching operation are eliminated.It has obvious advantages under the application conditions of high voltage,high current and high frequency.