掺银硫系玻璃光电探测器响应波长特性研究

Response Wavelength Characterization of Ag-doped Chalcogenide Glass Photodetectors

由于硫系玻璃具有良好的光学性质,在非线性光学等方面研究广泛,但基于硫系玻璃光电探测器的相关研究却很少。本文利用真空共热蒸发技术制备了不同掺银比例的硫系玻璃薄膜作为半导体膜层结构,并设计构建了金属-绝缘体-半导体结构的自供电光电探测器,探究了该光电探测器的响应光谱范围。结果表明,该探测器对可见光到近红外区域的光均有响应。针对掺银硫系玻璃光电探测器在635 nm波长激光下,研究了探测器响应电压与激发功率之间的关系。当激光功率小于10 mW时,探测器响应电压与激发功率线性相关;当激光功率大于10 mW时,探测器响应电压逐渐饱和。探测器的上升和衰减时间分别为3.932 s和1.522 s。本研究为硫系玻璃材料在自供电光电探测器领域的应用提供了证明。

Due to the excellent optical properties of chalcogenide glasses,they have been extensively investigated in nonlinear optics and other fields,but there is little research based on chalcogenide glass photodetectors.In this pa‐per,we used vacuum co-thermal evaporation technology to prepare chalcogenide glass thin films with different silver doped ratios as semiconductor film structure,and designed a self-powered photodetector based on the MIS structure of chalcogenide glass thin films with different silver doped ratios.The response spectrum range of the photodetector was studied,and the results showed that the detector was responsive to light from visible to near infrared regions.The relationship between the response voltage and excitation power was researched for the silver doped chalcogenide glass at 635 nm wavelength laser.For the laser power was less than 10 mW,the response voltage of the photodetector was linearly related to the excitation power.For the laser power was higher than 10 mW,the response voltage of the photodetector appears saturation phenomenon.Moreover,the photodetector exhibits fast light response speed,with rise time and decay time of 3.932 s and 1.522 s,respectively.This study indicates that the chalcogenide glass is a promising method for self-powered photodetectors.