一种基于匹配网络结构的高效率X波段高功率放大器设计

Design of High Efficiency X-Band High Power Amplifier Based on Matching Network Structure

基于0.25μm氮化镓工艺,设计了一款30 W X波段单片微波集成电路(monolithic microwave integrated circuit, MMIC)高功率放大器。基于两级级联拓扑结构电路,提出了宽带低损耗的输出、级间、输入匹配网络及栅极/漏极偏置网络,实现了放大器全频段绝对稳定的高输出功率和高效率。后仿真结果表明:在工作频率为8~12 GHz时,带内输入、输出驻波系数分别小于2.5,2.2,饱和输出功率为44.1 dBm,功率附加效率为38%~42%,平坦度为±0.3 dBm,转换功率增益大于17.9 dB。功率放大器的功率容量为40 W,芯片版图面积为16.9 mm2,可广泛应用于X波段卫星通信等无线通信领域。

A 30 W X-band(8~12 GHz)monolithic microwave integrated circuit(MMIC)(MMIC)high power amplifier(PA)is designed by using 0.25μm gallium nitride(GaN)process.The PA adopts a two-stage cascaded topology structure and uses a gate/drain bias network to achieve absolute stability across the entire frequency band of the amplifier.The in band input and output standing wave coefficients are less than 2.5 and 2.2,respectively.A saturated output power greater than 44.1 dBm is achieved,with an in bandηPAE greater than 38%,a saturated output power flateness of±0.3 dBm,and a conversion power gain greater than 17.9 dB by using a broadband low loss output,inter stage,and input matching network.The simulation results demonstrate that at the operating frequencies of 8~12 GHz,the power additional efficiency is 38%~42%,the area power density is 1.78 W·mm-2,the active peripheral power density is 4 W·mm-1,the power capacity of the power amplifier is 40W,and the chip layout area is 16.9 mm 2.The power amplifier using a low loss output matching network structure can be widely used in wireless communication fields such as X band satellite communication.