磁随机存储器的电磁敏感度研究

Electromagnetic Sensitivity of a Novel Magnetic Random Access Memory

采用直接功率注入法(direct power injection,DPI)对一款新型磁随机存储器(magneto resistive random access memory,MRAM)芯片进行了抗干扰测试。在存储数字“0”和“1”的情况下,对MRAM的电源引脚、数据引脚、控制引脚进行了干扰注入,对比了各引脚的失效功率。测试结果表明:MRAM在存储数字“0”时的敏感度比数字“1”时的敏感度低;与干扰从地引脚注入相比,干扰从电源引脚注入时芯片的敏感度更高;读取电路电磁敏感度和输出引脚与电源引脚具有较大相关性。这一研究结果可为提升新型存储器MRAM的芯片抗扰度及电路优化提供理论参考。

In this paper,a novel type of magnetic random access memory(MRAM)chip is tested for anti-interference using direct power injection(DPI).Interference injection is performed on the power pin,data pin,and control pin of MRAM while storing numbers is“0”or“1”,and the failure power of each pin is compared.The test results show that MRAM has lower sensitivity when storing the number is“0”than that when storing the number is“1”.Compared to interference injected from the ground pin,the sensitivity of the chip is higher when interference is injected from the power pin.The electromagnetic sensitivity of the reading circuit and the correlation between the output pin and the power pin are significant.The study can provide theoretical reference for improving the chip immunity and circuit optimization of the new memory MRAM.