摘要
本文采用化学腐蚀工艺制备的碳化硅量子点作为新型标记材料,成功实现了其对串珠镰孢菌的标记,并基于该标记技术研究了酚酸类物质对该菌分裂过程的影响,揭示了串珠镰孢菌对拟南芥幼苗的侵染机制。结果表明,腐蚀法制备的量子点直径约为5 nm,近似呈球状,在激发光波长340 nm时光致发光强度峰值达到最大,量子点表面未经修饰既已形成了羟基、羧基及巯基亲有机基团;串珠镰孢菌在苯甲酸的胁迫下呈现出分裂迅速、产孢数量多、孢子侵染毒力强等生长变化态势,且该趋势与苯甲酸含量正相关;长时成像及示踪结果表明,拟南芥根毛区是该菌对其侵染的第一部位,其次为表皮细胞,最后该菌冲破植株最后一道安全屏障细胞壁进入细胞核,完成整个侵染过程。
Silicon carbide quantum dots were prepared by the chemical etching process developed as a new labeling material,successfully achieved its labeling of Fusarium moniliforme.Based on this labeling technology,the influence of phenolic acids on the growth and division status of the fungus was studied,and the infection mechanism of the fungus on Arabidopsis seedlings in continuous cropping gardens was preliminarily explored.The results showed that the diameter of the quantum dots prepared by the corrosion method is about 5 nm,which approximately spherical in shape.The maximum intensity of photoluminescence occurs when the excitation wavelength is 340nm.The surface of the quantum dots are unmodified,hydroxyl,carboxyl,and sulfydryl groups have already formed;under the stress of benzoic acid,Fusarium moniliforme showed rapid division,abundant spore production,and strong spore infection toxicity,and this trend was positively correlated with benzoic acid content;The dynamic tracing results indicate that the first site of infection by Fusarium moniliforme on Arabidopsis was the root hair zone,followed by epidermal cells.Finally,the fungus breaks through the last safety barrier cell wall of the plant and enters the nucleus to complete the entire infection process.
作者
康杰
白玲
丁紫阳
焦璨
孙为云
KANG Jie;BAI Ling;DING Zi-yang;JIAO Can;SUN Wei-yun(College of Advanced Materials Engineering,Zhengzhou Technical College,Zhengzhou 450121,China)
出处
《山东工业技术》
2024年第1期30-37,共8页
Journal of Shandong Industrial Technology
基金
河南省重点研发与推广专项(科技攻关)(212102210551)
河南省科技攻关项目(222102220118)。
关键词
SiC量子点
串珠镰孢菌
荧光标记
长时程成像
动态示踪
SiC quantum dots
fusarium moniliforme
fluorescence labeling
long-term imaging
dynamic tracing