0.2~2.0GHz100W超宽带GaN功率放大器

0.2-2.0 GHz 100 W Ultra-Wideband GaN Power Amplifier

设计并实现了一款基于0.25μm GaN高电子迁移率晶体管(HEMT)工艺的100 W超宽带功率放大器。基于SiC无源工艺设计了集成无源器件(IPD)输入预匹配电路芯片;设计了基于陶瓷基片的T型集成输出预匹配电路;基于建立的传输线变压器(TLT)的精确模型,设计了宽带阻抗变换器,在超宽频带内将50Ω的端口阻抗变换至约12.5Ω,再通过多节微带电路与预匹配后的GaN HEMT芯片实现阻抗匹配。最终,以较小的电路尺寸实现了功率放大器的超宽带性能指标。测试结果表明,功率放大器在0.2~2.0 GHz频带内,在漏极电压36 V、输入功率9 W、连续波的工作条件下,输出功率大于103 W,漏极效率大于50%,输入电压驻波比(VSWR)≤2.5。

A 100 W ultra-wideband power amplifier was designed and realized based on 0.25μm GaN high electron mobility transistor(HEMT)process.The input pre-matching circuit was designed as an integrated passive device(IPD)chip based on SiC passive process.The output T-type integrated pre-matching circuit was designed based on ceramic substrate.The wideband impedance transformer was designed by building a precise model of transmission line transformer(TLT),and the port impedance was transformed from 50Ω to about 12.5Ω in the ultra-wideband,and then the impedance was matched to the pre-matched GaN HEMT chip through multiple microstrip circuits.Finally,the ultra-wideband performance index of the power amplifier with smaller circuit size was realized.The measurement results show that under the operating conditions of drain voltage of 36 V,input power of 9 W,and continuous waveform operation,the power amplifier can achieve an output power of more than 103 W with more than 50% drain efficiency,and the input voltage standing wave ratio(VSWR)is less than or equal 2.5 in the frequency band of 0.2-2.0 GHz.