通过应变工程提高有机半导体的迁移率

Boosting the mobility of organic semiconductors through strain engineering

有机半导体(OSCs)是推动柔性电子发展的关键.然而,其应用一直受到其较低迁移率的阻碍.虽然分子工程和器件工程可以提高OSC迁移率,但近年来进展几乎停滞不前.本研究揭示了有机半导体在应变下的层数依赖电荷输运特性,并通过应变工程可大幅提高其迁移率.施加应变可以减小分子间π-π间距并减少电子-声子散射,从而提高电荷输运效率.我们观察到应变因子和材料厚度之间存在直接相关性,较薄的晶体具有较高的应变因子.使用分子级薄的二维分子晶体,我们观察到迁移率显著提高了58%.我们的研究结果为提高有机半导体的迁移率开辟了新的途径.

Organic semiconductors(OSCs)are pivotal for advancing flexible electronics.However,their application has been severely hindered by their poor mobility.Although molecular and device engineering can improve OSC mobility,progress has stagnated in recent years.In this study,we uncovered the layer-dependent charge transport properties of OSCs under strain and substantially enhanced their mobility by strain engineering.Applying strain reduced intermolecularπ±πspacing and electron±phonon scattering,thereby improving the charge transport efficiency.We observed a direct correlation between strain factor and material thickness,with thinner crystals demonstrating higher strain factors.Using molecularly thin two-dimensional molecular crystals,we achieved a substantial 58%increase in mobility.Our findings open new avenues to enhancing the mobility of OSCs.