溶液法制备透明p型非晶磷掺杂SnO薄膜基超高速自供电光电探测器

Super high-speed self-powered photodetector based on solution-processed transparent p-type amorphous phosphorous-doped SnO film

p型氧化物半导体具有很强的空穴局域性,难以产生容易移动的空穴载流子,用简单方法制备高光电性能的p型氧化物半导体极具挑战性.本研究采用简单溶胶-凝胶法在手套箱中制备了非晶透明p型SnO薄膜.磷(P)掺杂改善了SnO薄膜及其相应自供电异质结光电探测器的光电性能.基于P掺杂SnO(P-SnO)的自供电异质结光电探测器的响应时间为40.29μs/76.24μs(0 V偏置),与其他p型氧化物基光电探测器相比响应时间最快.与典型的n型非晶氧化镓光电探测器相比,P-SnO光电探测器还具有最快的衰减时间.本文通过P掺杂引入杂质能级,导致光生电子-空穴对和光电流的增加以及器件性能的提高.这一工作不仅为制备高性能、低成本的p型P-SnO薄膜和光电探测器提供了一种简单的方法,而且为改进各种p型氧化物半导体和器件性能提供了一种新的途径.

It is challenging to simply prepare high-per-formance optoelectronic p-type oxide semiconductors because their strong hole localization makes it difficult to generate mobile hole carriers.In this study,amorphous transparent p-type SnO films were prepared in a glove box using a simple sol-gel method.Phosphorus(P)doping improves the optoelec-tronic properties of the SnO films and their corresponding self-powered heterojunction photodetectors.The response time of the self-powered heterojunction photodetectors based on P-doped SnO(P-SnO)is 40.29μs/76.24μs(0 V bias),which is the fastest among other p-type oxide-based photodetectors.The P-SnO photodetector also possesses the fastest decay time compared with typical n-type amorphous gallium oxide pho-todetectors.Introducing impurity energy levels through P doping is responsible for the increase in photogenerated electron-hole pairs and photocurrent and device performance enhancement.This work not only provides a simple method for preparing high-performance and low-cost p-type P-SnO films and photodetectors,but also offers a new approach for improving the performance of various p-type oxide semi-conductors and devices.