摘要
The exploration and research of low-cost,environmentally friendly,and sustainable organic semiconductor materials are of immense significance in various fields,including electronics,optoelectronics,and energy conversion.Unfortunately,these semiconductors have almost poor charge transport properties,which range from∼10^(−4) cm^(2)·V^(−1)·s^(−1) to∼10^(−2) cm^(2)·V^(−1)·s^(−1).Vat orange 3,as one of these organic semiconductors,has great potential due to its highly conjugated structure.We obtain high-quality multilayered Vat orange 3 crystals with two-dimensional(2D)growth on h-BN surfaces with thickness of 10–100 nm using physical vapor transport.Raman’s results confirm the stability of the chemical structure of Vat orange 3 during growth.Furthermore,by leveraging the structural advantages of 2D materials,an organic field-effect transistor with a 2D vdW vertical heterostructure is further realized with h-BN encapsulation and multilayered graphene contact electrodes,resulting in an excellent transistor performance with On/Off ratio of 104 and high field-effect mobility of 0.14 cm^(2)·V^(−1)·s^(−1).Our results show the great potential of Vat orange 3 with 2D structures in future nano-electronic applications.Furthermore,we showcase an approach that integrates organic semiconductors with 2D materials,aiming to offer new insights into the study of organic semiconductors.
作者
闫宁
熊志仁
秦成兵
李小茜
Ning Yan;Zhiren Xiong;Chengbing Qin;and Xiaoxi Li(State Key Laboratory of Quantum Optics and Quantum Optics Devices,Institute of Opto-Electronics,Shanxi University,Taiyuan 030006,China;Collaborative Innovation Center of Extreme Optics,Shanxi University,Taiyuan 030006,China;State Key Laboratory of Quantum Optics and Quantum Optics Devices,Institute of Laser Spectroscopy,Shanxi University,Taiyuan 030006,China)
基金
supported by the National Natural Science Foundation of China(Grant Nos.U21A6004,62375160,62274180,and 12004389).