基于Si纳米膜的差分结构矢量水听器工艺研究

Research on differential structure vector hydrophone technology based on Si nanofilm

通过关键工艺步骤,将硅(Si)纳米膜制备在差分结构水听器上作为压敏电阻,利用Si纳米膜的巨压阻效应来提高水听器的灵敏度;利用深Si刻蚀,将Si柱与芯片一体化,减少了差分结构的对准误差,同时抑制海洋洋流带来的振动干扰。设计了相对应的光刻掩模版和整套工艺流程,通过MEMS工艺,成功加工出Si纳米膜作为压敏电阻,实现矢量水听器芯片与Si柱集成化。对制备好的芯片进行观测与测试,使用激光共聚焦显微镜和扫描电子显微镜(SEM)设备观察芯片形貌良好,尺寸与设计基本一致;通过半导体分析仪测量得到压敏电阻器的阻值为15.3×10^(4)Ω,线性度良好,符合矢量水听器功能需求。

Through critical process steps,Si nano membrane is prepared on difference structure hydrophone as varistor,giant piezoresistive effect of silicon nano film is used to improve the sensitivity of hydrophone.Deep silicon etching is used to integrate the silicon column and the chip,which reduces the alignment error of the differential structure and inhibits the vibration interference caused by ocean current.The corresponding photolithography mask and the whole process flow are designed.Through MEMS process,silicon nano film is successfully processed as the varistor,and the integration of vector hydrophone chip and silicon column is realized.The prepared chip is observed and tested.The chip morphology is observed to be good by confocal laser microscope and scanning electron microscope(SEM),and the size is basically consistent with the design.The resistance value of the varistor measured by the semiconductor analyzer is 15.3×10^(4)Ω,which has good linearity and meets the functional requirements of the vector hydrophone.