期刊文献+

基于阴极往复运动的TGV电铸铜实心填充工艺

Copper Filling Process of TGV Electroforming Based on Cathode Reciprocating Motion
下载PDF
导出
摘要 玻璃通孔(TGV)转接板因其具有优良的高频电学特性,在先进封装领域受到广泛关注。然而随着TGV深宽比的不断增加,采用传统的阴极定轴旋转式电铸工艺,其填充难度与成本将随之提高。为实现高深宽比TGV的无缺陷填充,减少电铸耗时和成本,提出一种基于阴极往复运动的TGV无缺陷镀铜填充新工艺。在仿真和实验的基础上,系统研究了阴极运动方式对TGV孔内电铸液传质、离子浓度、填充速率的影响。仿真和实验结果均表明,采用阴极往复运动能有效地保证TGV孔内各处离子浓度分布的均匀一致性,减缓浓差极化,从而提高沉积速率及其上限值。在不含任何添加剂的体系中,同等沉积电位条件下平均填充速率从阴极定轴旋转式电铸工艺的6.1μm/h提高至9.2μm/h。当电位为0.5 V时,阴极往复运动方式下平均填充速率达到45.2μm/h,且电铸铜填充层中未发现孔隙缺陷。这为在无添加剂电铸铜体系中实现高深宽比TGV的无缺陷电铸铜填充提供了一种可行的低成本方案。 Through-glass via(TGV)has attracted much attention in the field of advanced packaging due to its excellent high-frequency electrical properties.However,as the aspect ratio of TGV increasing continously,the difficulty and cost of filling that using the traditional fixed axis rotary cathode electroforming process will increase.To achieve defect-free filling of TGVs with high aspect ratios and to reduce the electroforming time and cost,a novel process for defectfree filling of TGV using cathode reciprocation motion was proposed.Through simulations and experiments,the effects of the cathode motion mode on the mass transfer,ion concentration,and filling rate of the electroforming solution in the TGV holes were systematically investigated.The simulation and experimental results show that the reciprocating motion of cathode can effectively ensure the uniform distribution of ion concentration in the TGV holes,slow down the concentration polarization,and increase the deposition rate and its upper limit value.In the solution without any additives,the average filling rate increases from 6.1μm/h in the cathodic fixed axis rotary electroforming process to 9.2μm/h under the same deposition potential,and the average filling rate can reach 45.2μm/h in the cathodic reciprocating mode at a potential of 0.5 V,and no pore defects are found in the Cu filling layer.The study provides a feasible lowcost solution to achieve defect-free filling of TGVs with high aspect ratios in additive-free electroforming copper system.
作者 刘佳琪 詹晓非 朱增伟 叶刚 夏晨辉 Liu Jiaqi;Zhan Xiaofei;Zhu Zengwei;Ye Gang;Xia Chenhui(College of Mechanical and Electrical Engineering,Nanjing University of Aeronautics and Astronautics,Nanjing 210016,China;The 58th Research Institute,China Electronics Technology Group Corporation,Wuxi 214035,China)
出处 《微纳电子技术》 CAS 2024年第3期151-159,共9页 Micronanoelectronic Technology
基金 江苏省前沿引领技术基础研究专项(BK20222010) 中央高校基本科研业务费专项(ILA22020)。
关键词 玻璃通孔(TGV) 阴极往复运动 电铸铜 填充工艺 封装技术 through-glass via(TGV) cathode reciprocating motion copper electroforming filling process package technology
  • 相关文献

参考文献9

二级参考文献56

  • 1李永海,丁桂甫,毛海平,张永华.LIGA/准LIGA技术微电铸工艺研究进展[J].电子工艺技术,2005,26(1):1-5. 被引量:20
  • 2刘成,黄廷林,赵建伟.混凝、粉末活性炭吸附对不同分子量有机物的去除[J].净水技术,2006,25(1):31-33. 被引量:43
  • 3封国强,蔡坚,王水弟.硅通孔互连技术的开发与应用[J].电子与封装,2006,6(11):15-18. 被引量:8
  • 4赵芳霞,张振忠,郭世德.石英玻璃表面化学镀镍-磷工艺研究[J].功能材料,2007,38(2):268-271. 被引量:3
  • 5NASIRI S, LIN S H, SACHS D, et al. Motion processing: the next breakthrough function in handsets [EB/OL]. (2010 - 07 - 01) [-2011 - 08 - 12-]. http: //mobiledevdesign. com/tuto- rials/motion-processing-next-breakthrough-070110/.
  • 6GARROU P, BOWER C, RAMM P. Hand book of 3D inte- gration [M]. Weinheim: Wiley-VCH Verlag GmbH & Co KGaA, 2008.. 25-40.
  • 7RODIN A M. High throughput laser interconnect via and di- cing process [EB/OL]. (2007- 10 - 01) [2011 - 08 - 19]. http: //www. emc3d, org/documents/lihrary/marketAna- lysis_ 3D/Xsil_ EMC-3Dfinal. pdf.
  • 8JANG D M, RYU C, LEE K Y, et al. Develop and evaluation of 3-D SiP with vertically interconnected through silicon via (TSV) l-C] //Proceedings of IEEE Electronic Components and Technolo- gy Conference. Reno, NV, USA, 2007: 847-852.
  • 9NGUYEN N T, BOELLAARD E, PHAM N P, et al. Through- wafer copper electroplating for three-dimensional interconnects [J]. Journal of Micromechanics and Microengineering, 2002, 12 (4): 395 - 399.
  • 10DRUESNEF, PAUMELLEP, VILLONP. Application of the BEM to chromium electroplating simulation and to identifica- tion of experimental polarization laws [ J ]. Engineer Analysis with Boundary Elements,2000(24) : 615 - 622.

共引文献46

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部